VERTICALLY ORIENTED SEMICONDUCTOR DEVICE AND SHIELDING STRUCTURE THEREOF

摘要

PURPOSE: A vertically oriented semiconductor and a shielding structure thereof are provided to increase a low thermal noise and a quality factor of a manual device. CONSTITUTION: An interconnect structure is formed on a substrate. The interconnect structure includes a capacitor and an inductor(50) combined with the capacitor. The capacitor has an anode and a cathode. The inductor includes a coil feature(52) and a shield structure(54) for surrounding the coil feature. The shield structure includes a first lateral part(54a) arranged at both sides of the coil feature and a second lateral part(54b).