THIN FILM TRANSISTOR USING IN-AL-ZN-O THIN FILM AND METHOD OF PREPARING THE THIN FILM

摘要

PURPOSE: A thin film transistor using an In-Al-Zn-O thin film and a method for preparing a thin film are provided to form an IAZO layer by doping Al in a channel layer of a thin film transistor and to secure a transparent and excellent thin film transistor. CONSTITUTION: A gate electrode is formed in the upper part of a substrate. An insulating layer is formed in the upper part of the gate electrode. A channel layer is formed in the upper part of the insulating layer. The channel layer is made of an oxide semiconductor IAZO. The aluminum content of the channel layer is 0.1 to 10 weight %. A source/drain electrode is formed in the upper part of the channel layer.