| 摘要 |
PURPOSE: A substrate processing apparatus is provided to secure a desired substrate processing map by controlling the density of plasma. CONSTITUTION: A process chamber(100) has a process space(101) for a substrate(W). A substrate support part includes a lower electrode(220), a heater(230), a support plate(240), and an insulating plate(270). A gas supply part(300) supplies process gas to the process chamber. An antenna(443) includes slot holes(444) separated from each other. A window(450) transmits microwave generated from the antenna to the process chamber.
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