发明名称 |
Low-noise amplifier with gain enhancement |
摘要 |
A low-noise amplifier ("LNA") includes a first cascode gain stage including a first complementary metal oxide semiconductor ("CMOS") transistor configured to receive a radio frequency ("RF") input signal and a second CMOS transistor coupled to an output node. The first inductive gate network is coupled to a gate of the second CMOS transistor for increasing a gain of the first cascode gain stage. The first inductive gate network has a non-zero inductive input impedance and includes at least one passive circuit element. |
申请公布号 |
US8427240(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100968342 |
申请日期 |
2010.12.15 |
申请人 |
HSIEH HSIEH-HUNG;WU PO-YI;CHEN HO-HSIANG;JOU CHEWN-PU;HSUEH FU-LUNG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HSIEH HSIEH-HUNG;WU PO-YI;CHEN HO-HSIANG;JOU CHEWN-PU;HSUEH FU-LUNG |
分类号 |
H03F3/04 |
主分类号 |
H03F3/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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