发明名称 |
Fluorine compounds for doping conductive oxide thin films |
摘要 |
Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate. |
申请公布号 |
US8425978(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100884490 |
申请日期 |
2010.09.17 |
申请人 |
GESSERT TIM;LI XIAONAN;BARNES TERESA M.;TORRES, JR. ROBERT;WYSE CARRIE L.;ALLIANCE FOR SUSTAINABLE ENERGY, LLC |
发明人 |
GESSERT TIM;LI XIAONAN;BARNES TERESA M.;TORRES, JR. ROBERT;WYSE CARRIE L. |
分类号 |
C23C16/00;C23C16/08 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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