High frequency and power field effect transistor with mesh-like gate structure,申请号US19620243793-传众专利搜索

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发明名称	High frequency and power field effect transistor with mesh-like gate structure
摘要
申请公布号	US3274461(A)	申请公布日期	1966.09.20
申请号	US19620243793	申请日期	1962.12.11
申请人	STANISLAS TESZNER	发明人	TESZNER STANISLAS
分类号	H01L21/00;H01L29/808	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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