发明名称 |
Methods of manufacturing a vertical type semiconductor device |
摘要 |
Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that is adjacent the first region. The first mold structure includes first sacrificial patterns and first interlayer patterns stacked alternately. A second mold structure is formed on the first mold structure and the stopping layer pattern. The second mold structure includes second sacrificial patterns and second interlayer patterns stacked alternately. The second mold structure partially covers the stopping layer pattern. A channel pattern is formed and passes through the first mold structure and the second mold structure. |
申请公布号 |
US8426304(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US201113241316 |
申请日期 |
2011.09.23 |
申请人 |
YOO DONG-CHUL;PARK CHAN-JIN;HWANG KI-HYUN;CHOI HAN-MEI;LEE JOON-SUK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO DONG-CHUL;PARK CHAN-JIN;HWANG KI-HYUN;CHOI HAN-MEI;LEE JOON-SUK |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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