发明名称 |
Body-tied asymmetric P-type field effect transistor |
摘要 |
In one exemplary embodiment of the invention, an asymmetric P-type field effect transistor includes: a source region coupled to a drain region via a channel; a gate structure overlying at least a portion of the channel; a halo implant disposed at least partially in the channel, where the halo implant is disposed closer to the source region than the drain region; and a body-tie coupled to the channel. In a further exemplary embodiment, the asymmetric P-type field effect transistor is operable to act as a symmetric P-type field effect transistor. |
申请公布号 |
US8426917(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100683606 |
申请日期 |
2010.01.07 |
申请人 |
SLEIGHT JEFFREY W.;LIN CHUNG-HSUN;CHANG JOSEPHINE B.;CHANG LELAND;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SLEIGHT JEFFREY W.;LIN CHUNG-HSUN;CHANG JOSEPHINE B.;CHANG LELAND |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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