发明名称 |
Solid state imaging device |
摘要 |
A solid state imaging device in which gamma characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end. |
申请公布号 |
US8426896(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US201113170779 |
申请日期 |
2011.06.28 |
申请人 |
KUMESAWA TETSURO;SONY CORPORATION |
发明人 |
KUMESAWA TETSURO |
分类号 |
H01L27/148;H01L27/146;H04N5/335;H04N5/355;H04N5/369 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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