发明名称 Solid state imaging device
摘要 A solid state imaging device in which gamma characteristic is obtained and enlargement of dynamic range is provided. The solid state imaging device of the present invention includes a vertical overflow function and has a feature in which potential of a semiconductor substrate is changed from a high potential to a low potential in a stepwise manner during a period from an exposure start to an exposure end.
申请公布号 US8426896(B2) 申请公布日期 2013.04.23
申请号 US201113170779 申请日期 2011.06.28
申请人 KUMESAWA TETSURO;SONY CORPORATION 发明人 KUMESAWA TETSURO
分类号 H01L27/148;H01L27/146;H04N5/335;H04N5/355;H04N5/369 主分类号 H01L27/148
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