| 摘要 |
A plasma monitoring method measures in-situ a resistance of and a current flowing in a side wall. A monitoring system has two sensors in a plasma chamber, each having upper and lower electrodes. An external resistance element is connected only to one of the two sensors, in parallel to the wires extending from the upper and lower electrodes of the sensor concerned. Consequently, a resistance between the upper and lower electrodes is different in the two sensors, and two different values of potential difference between the upper and lower electrodes are obtained in-situ. Because a resistance value of the external resistance element is known, a resistance value of a side wall of a contact hole per one contact hole is obtained in-situ, and consequently an electric current flowing in the side wall of the contact hole per one contact hole can be obtained. |
