发明名称 |
Scaled-down phase change memory cell in recessed heater |
摘要 |
A semiconductor structure configurable for use as a nonvolatile storage element includes a first electrode, an insulating layer formed on at least a portion of an upper surface of the first electrode, and a pillar traversing the insulating layer and being recessed relative to an upper surface of the insulating layer. The pillar includes a heater formed on at least a portion of the upper surface of the first electrode and a collar formed on sidewalls of the insulating layer proximate the heater and on at least a portion of an upper surface of the heater. The structure further includes a PCM layer formed on at least a portion of the upper surface of the insulating layer and substantially filling a volume defined by the upper surface of the heater and at least a portion of an upper surface of the collar. A second electrode is formed on at least a portion of an upper surface of the phase change material layer. |
申请公布号 |
US8426967(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20070620138 |
申请日期 |
2007.01.05 |
申请人 |
JOSEPH ERIC ANDREW;LAM CHUNG HON;SCHROTT ALEJANDRO GABRIEL;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
JOSEPH ERIC ANDREW;LAM CHUNG HON;SCHROTT ALEJANDRO GABRIEL |
分类号 |
H01L23/48;H01L21/06;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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