发明名称 |
Nonvolatile memory cells having phase changeable patterns therein for data storage |
摘要 |
A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.
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申请公布号 |
US8426840(B2) |
申请公布日期 |
2013.04.23 |
申请号 |
US20100913099 |
申请日期 |
2010.10.27 |
申请人 |
AN HYEONG-GEUN;AHN DONG-HO;LIM YOUNG-SOO;HA YONG-HO;JANG JUN-YOUNG;LIM DONG-WON;LEE GYEO-RE;PARK JOON-SANG;KO HAN-BONG;PARK YOUNG-LIM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AN HYEONG-GEUN;AHN DONG-HO;LIM YOUNG-SOO;HA YONG-HO;JANG JUN-YOUNG;LIM DONG-WON;LEE GYEO-RE;PARK JOON-SANG;KO HAN-BONG;PARK YOUNG-LIM |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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地址 |
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