| 摘要 |
The present invention further relates to an OLED device, including R, G, B, and W subpixels. Specifically, the OLED device comprises a substrate; a thin film transistor (TFT) active layer disposed on the substrate, comprising a gate electrode, a gate insulating layer, an active layer, an interlayer insulating layer, a source electrode, and a drain electrode; an overcoat layer disposed over the thin film transistor; and a passivation layer disposed between the thin film transistor and the overcoat layer, wherein the passivation layer is absent in a path of a light or wherein the passivation layer is disposed in the path of the light as a single layer comprising silicon nitride. |
