发明名称 Interdigitated back contact silicon solar cells with separating grooves
摘要 Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.
申请公布号 US8426724(B2) 申请公布日期 2013.04.23
申请号 US20100954234 申请日期 2010.11.24
申请人 NAKAYASHIKI KENTA;XU BAOMIN;PALO ALTO RESEARCH CENTER INCORPORATED 发明人 NAKAYASHIKI KENTA;XU BAOMIN
分类号 H02N6/00;H01L31/00 主分类号 H02N6/00
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