| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an adhesive tape for processing a brittle wafer that is bonded to the wafer surface in order to protect the luminous layer and the circuit surface so that the rear surface of the wafer can be ground up to a predetermined finish thickness with no problem and jumping of chips is prevented at the time of breaking, in the process of grinding and processing the rear surface of the brittle wafer, and to provide a processing method of a brittle wafer using the same. <P>SOLUTION: The adhesive tape for processing a brittle wafer has, on a base material resin film, an adhesive layer consisting of at least one layer composed of radiation-curable adhesive and at least one layer composed of a pressure-sensitive adhesive, in order from the base material resin film. Adhesive force of the adhesive layer to the silicon wafer mirror surface is 2.0-15 N/25 mm, compression displacement before radiation-curing is 150 μm or less, and the thickness of the base material resin film is 25-150 μm. A processing method of a brittle wafer using the adhesive tape for processing the brittle wafer is also provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
