发明名称 |
MAGNETIC SENSOR DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a magnetic sensor device capable of preventing dielectric breakdown of a TMR element even if the TMR element is installed in a high temperature environment and obtaining a high S/N ratio while being hardly affected by a noise. <P>SOLUTION: A magnetic sensor device includes: a tunnel magnetic resistance element 2; a pair of lead wires 3 with each one end thereof coupled to each of both terminals of the tunnel magnetic resistance element 2; and a drive detection circuit 4 coupled to the other ends of the pair of lead wires 3 and configured to voltage-drive or current-drive the tunnel magnetic resistance element 2 to detect a resistance change. The drive detection circuit 4 includes a protection circuit 6 configured by coupling at least a pair of diodes 6a with a pair of output terminals 4a coupled to the other ends of the pair of lead wires 3. The pair of diodes 6a is arranged in opposite directions with each other and coupled in parallel or in series. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013072820(A) |
申请公布日期 |
2013.04.22 |
申请号 |
JP20110213646 |
申请日期 |
2011.09.29 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
UOZUMI SATOSHI;NAKAMURA KENZO |
分类号 |
G01R33/09;G11B5/39;G11B5/40;H01L43/08 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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