SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To solve a problem that an ion implanted in a gate electrode film reaches a channel region to affect electrical characteristics of an MISFET.

SOLUTION: A field effect transistor comprises a first gate electrode film formed on a principal surface of a semiconductor substrate via a gate insulation film and consisting primarily of silicon containing an impurity to be a first conductivity type; an intermediate layer formed on the first gate electrode film and consisting primarily of silicon containing one or both of oxygen and nitrogen; and a second gate electrode film formed on the first gate electrode film via the intermediate layer and consisting primarily of silicon containing the impurity to be the first conductivity type.

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