THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor, a thin film transistor panel and a method for manufacturing the same are provided to reduce the capacitance between a source electrode and a gate electrode by overlapping the gate electrode with an etch stop layer. CONSTITUTION: A semiconductor layer(154) is formed on a substrate(110). A first source electrode(165s) is separated from a first drain electrode(165d) on the semiconductor layer. A channel region is formed in the semiconductor layer between the first drain electrode and the first source electrode. An etch stop layer(160) is formed on the channel region, the first source electrode, and the first drain electrode. A second source electrode(174s) and a second drain electrode(174d) are formed on the etch stop layer.