| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a device capable of performing fine control of the ratio of silicon atoms contained in a tungsten silicide film, when forming the tungsten silicide film on a titanium nitride film formed on one surface of a processed substrate by sputtering. <P>SOLUTION: In the method of manufacturing a device by laminating a titanium nitride film 109, a tungsten silicide film 110, and a tungsten film 111, in order, on one surface 103a of a processed substrate, at least a target 102 consisting of tungsten atoms and a process gas containing silicon atoms are used when forming the tungsten silicide film 110 by sputtering. <P>COPYRIGHT: (C)2013,JPO&INPIT |
