| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound semiconductor device and a manufacturing method of the same, which can achieve normally-off operation while inhibiting current collapse. <P>SOLUTION: A compound semiconductor device of an embodiment comprises: a substrate 1; a compound semiconductor laminate structure 7 formed above the substrate 1; and a gate electrode 11g, a source electrode 11s and a drain electrode 11d which are formed above the compound semiconductor laminate structure. The compound semiconductor laminate structure 7 includes a nitride semiconductor layer including an electron transit layer 3 and an electron supply layer 5 formed above the electrode transit layer 3. An In composition of a surface of the nitride semiconductor layer, in each of a region between the gate electrode 11g and the source electrode 11s, and a region between the gate electrode 11g and the drain electrode 11d in a planar view, is lower than the In composition in a region under the gate electrode 11g. <P>COPYRIGHT: (C)2013,JPO&INPIT |
