| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for further enhancing absorption of light in a semiconductor layer. <P>SOLUTION: In a photoelectric conversion device 10 including a photoelectric conversion layer 14 having a one conductivity type first semiconductor layer 12, the photoelectric conversion layer 14 has a plurality of first columns 20 formed on the rear surface on the reverse side of a light-receiving surface, and first holes 22 provided so as to surround the side face of the first columns 20 and having a refractive index smaller than that of the first columns 20. The first column 20 has a diameter or a diagonal line shorter than the wavelength of at least some of the light passed through the first semiconductor layer 12, and a second semiconductor layer 24 having a conductivity type reverse from that of the first semiconductor layer 12 is formed. The first column 20 is continuous to an adjacent first column 20 at at least the outer edge of the top. <P>COPYRIGHT: (C)2013,JPO&INPIT |
