SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to protect a Ti layer using a SiN layer with excellent wet-proof properties and to prevent the corrosion of the Ti layer due to impurities. CONSTITUTION: A lower line layer(2) is formed on a GaAs substrate(1). A resin layer(4) is formed on the GaAs substrate and the lower line layer. A SiN layer(6) is formed on the lower line layer and the resin layer. An upper line layer(8) is formed on the lower line layer and a part of the resin layer. The upper line layer has a Ti layer(8a) connected to the lower line layer and an Au layer(8b) through an opening(5,7). A SiN layer(9) is formed on the upper line layer and the resin layer.