| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN-based light-emitting diode which has an n-side electrode formed on a rear face of an m-plane GaN substrate and which improves luminous efficiency by control of a pathway of a current flowing in the element. <P>SOLUTION: A GaN-based light-emitting diode comprises: a substrate which is an m-plane GaN substrate of an n-type conductivity; an epitaxial layer composed of a GaN-based semiconductor epitaxially grown on the substrate and including a pn junction light emitting structure; an n-side electrode formed on a rear face of the substrate; a translucent p-side ohmic layer formed on a top face of the epitaxial layer; and a p-side electrode pad formed on a part of the p-side ohmic electrode. In a region covered with the n-side electrode on the rear face of the substrate, a low contact resistance region which is a polishing finish region and a high contact resistance region which is a dry etching finish region are included. A whole or a part of orthogonal projection of the p-side electrode pad on the rear face of the substrate is included in the high contact resistance region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
