| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which efficiently removes deposits adhered to a surface of a substrate. <P>SOLUTION: In a semiconductor processing apparatus, nitrogen gas cooled to a temperature lower than 0°C is supplied around outer periphery of a lower surface of an ice body 532 which is in a state in which the ice body 532 is close to a surface Wf of a substrate W through a liquid film LF of DIW, and the DIW sandwiched between the surface Wf of the substrate W and the ice body 532 freezes to form a frozen region FR. As a result, in the frozen region FR, an adhesive force of deposits such as particles PT on the surface Wf of the substrate W is weakened by volume expansion of DIW due to ice formation, and the deposits are taken into the frozen region FR. By moving a freezing head 53 against the substrate W, the frozen region FR is released from the surface Wf of the substrate W, with the particles PT removed as well from the surface Wf of the substrate W together with the frozen region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
