SPIN TRANSISTOR AND MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a spin transistor in which an IDP/IDAPratio can be increased, and a memory.

SOLUTION: A spin transistor according to the present embodiment includes: a first magnetic layer formed on a substrate and serving as one of a source and a drain; an insulating film provided on the first magnetic layer and serving as a channel; a second magnetic layer provided on the insulating film and serving as the other of the source and the drain; a gate electrode provided on a side face of the insulating film; and a gate insulating film provided between the gate electrode and the side face of the insulating film.

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