| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a slurry for a CMP capable of polishing a silicon oxide film at practical speed without substantially polishing a CMP stopper film in a lower layer without generating a defect. <P>SOLUTION: A slurry for a CMP in an embodiment contains: colloidal silica blended with 0.5 mass% or more and 3 mass% or less of the total amount; and polycarboxylic acid whose weight average molecular weight is 500 or more and 10,000 or less, blended with 0.1 mass% or more and 1 mass% or less of the total amount, and pH is 2.5 or more and 4.5 or less. Particles with 50 mass% or more and 90 mass% or less of the whole colloidal silica have primary particle diameters of 3 nm or more and 10 nm or less. <P>COPYRIGHT: (C)2013,JPO&INPIT |
