| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same capable of suppressing solder diffusion at low cost and relieving stress. <P>SOLUTION: A semiconductor device comprises: a ground layer 12 provided on a substrate 10; a Ni layer 16 provided on the ground layer 12 by an electroless plating method; and a solder ball 20 provided on the Ni layer 16. In the semiconductor device and the method for manufacturing the same, a second region 16b which is a region on the solder ball 20 side of the Ni layer 16 is harder than a first region 16a which is a region on the ground layer 12 side of the Ni layer 16. <P>COPYRIGHT: (C)2013,JPO&INPIT |
