| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving power generation characteristics of a solar cell having a hetero junction cell composed of a p-type crystal Ge (substrate), an i-type amorphous silicon layer, and an n-type amorphous silicon layer. <P>SOLUTION: A method of manufacturing a photoelectric conversion device includes a hetero junction cell 1 in which a p-type crystal Ge is used as a substrate 11 and an i-type amorphous silicon layer 12 and an n-type amorphous silicon layer 13 are laminated on the substrate 11 in this order. This method includes a PH<SB POS="POST">3</SB>exposure processing step in which the substrate 11 of the p-type crystal Ge having a Ge (111) face on the surface is used and after heating the substrate 11 from which an oxide film 5 formed on the surface is removed to a predetermined temperature, the substrate 11 is exposed to the PH<SB POS="POST">3</SB>gas by being disposed in a vacuum chamber. <P>COPYRIGHT: (C)2013,JPO&INPIT |
