| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stencil mask capable of improving the pattern accuracy of a transfer pattern formed by a partial batch exposure process. <P>SOLUTION: A stencil mask comprises: a silicon support substrate layer having an opening through which charged particle beams permeate; a membrane layer which is made of silicon single crystals and is provided with through-holes to become a transfer pattern; and an intermediate insulation layer formed between the silicon support substrate layer and the membrane layer. The stencil mask is configured as a partial batch exposure stencil mask in which at least two or more through-holes have, in an overlapping manner, the same portion of the transfer pattern. By forming the same portion of the transfer pattern via transfer from at least two or more through-holes, the accuracy error of an exposure device and the mask is averaged, thus making it possible to obtain a high-accuracy transfer pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT |
