| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having dielectric strength voltage and capable of achieving normally-off without increasing on-resistance. <P>SOLUTION: A semiconductor device comprises: a first semiconductor layer 13 formed on a substrate 11; a second semiconductor layer 14 formed on the first semiconductor layer; a third semiconductor layer 15 formed on the second semiconductor layer; a gate electrode 21 formed on the third semiconductor layer; and a source electrode 22 and a drain electrode 23 formed in contact with the second semiconductor layer. In the third semiconductor layer, a semiconductor material is doped with a p-type impurity element. The third semiconductor layer has a region protruding from an end of the gate electrode to the side on which the drain electrode is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
