| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve an ESD protection element having excellent ESD protection characteristics, which ensures an intended break-down voltage and which can supply a large discharge current. <P>SOLUTION: PN junction diodes 35 each is formed by an N+ type buried layer 2 having an appropriate impurity concentration and a P+ type buried layer 3. The P+ type buried layer 3 penetrates an N- type epitaxial layer 4 integrally with a P+ type lead-out layer 5 to be connected with an anode electrode 10. An N+ type diffusion layer 7 and a P+ type diffusion layer 6 connected to and surrounding the N+ type diffusion layer 7 are formed on the N- type epitaxial layer 4 surrounded by the P+ type buried layer 3. The N+ type diffusion layer 7 and the P+ type diffusion layer 6 are connected to a cathode electrode 9. An ESD protection element comprises: parasitic PNP bipolar transistors 38 in each of which the P+ type diffusion layer 6 serves as an emitter, the N- type epitaxial layer 4 serves as a base and the P+ type lead-out layer 5 and the like serves as a collector; and the PN junction diodes 35. <P>COPYRIGHT: (C)2013,JPO&INPIT |
