| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves normally-off operation without increasing on-resistance. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of: sequentially forming a first semiconductor layer 14, a second semiconductor layer 15 and a semiconductor cap layer 16 containing a p-type impurity element, on a substrate 11; forming a dielectric layer 21 having an opening after having formed the semiconductor cap layer; forming a third semiconductor layer 17 containing the p-type impurity element on the semiconductor cap layer exposed in the opening; and forming a gate electrode 31 on the third semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
