| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in electromigration resistance and reliability, and provide a manufacturing method of the semiconductor device. <P>SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming an insulation film on a substrate; etching the insulation film to form a wiring groove; forming a copper film in the wiring groove to form copper wiring; planarizing surfaces of the copper wiring and the insulation film; forming a metal film on the planarized copper wiring and insulation film; performing heating in an oxygen-containing atmosphere to selectively react the metal film on the copper wiring with the copper wiring to form an alloy film, and to oxygenate and convert the metal film on the insulation film to an insulating film; and forming a block film on the alloy film and the insulating film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
