| 摘要 |
FIELD: electricity.SUBSTANCE: method to manufacture a shunting diode for solar batteries of spacecrafts includes generation of a planar diode structure on a silicon single-crystal substrate, generation of metallisation of the working side of the silicon single-crystal substrate, coating of the produced structure with a fully sensitive layer, drying and radiation with a UV-beam, thinning of the non-working side of the silicon single-crystal substrate with liquid etching, removal of the radiated photoresist in a developer, generation of metallisation of the non-working side of the silicon single-crystal substrate, burning of the produced structure, separation of the silicon single-crystal substrate into crystals, connection of electroconductive busbars to metallisation of the working and non-working sides of the crystal. Generation of metallisation on the working side of the silicon single-crystal substrate is carried out in two stages: an ohmic contact is generated to a parea on the basis of aluminium, and then metallisation is carried out with magnetron sputtering of aluminium, nickel and silver, and on the non-working side of the silicon single-crystal substrate - with serial magnetron sputtering of a valve metal, nickel and silver.EFFECT: improved reproducibility of a process for manufacturing of a shunting diode for solar batteries of spacecrafts.4 cl, 3 dwg, 1 tbl |
