发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A substrate processing apparatus is provided to improve the gas flow of a gas injecting part using a main guide part for gas and to uniformly treat a substrate. CONSTITUTION: A process chamber has a sealing space for treating a substrate. A substrate support unit for mounting the substrate is positioned in the process chamber. A gas injection part(140) is installed at the upper part of a process space and sprays gas to the process space. The gas injection surface(141) of the gas injection part has a rectangular shape. A main guide part(210) guides the flow of gas discharged from the gas injection part. The slope angle of the guide face(221) of a corner guide part(220) is smaller than that of the guide face(211) of the main guide part.
申请公布号 KR20130039146(A) 申请公布日期 2013.04.19
申请号 KR20110103631 申请日期 2011.10.11
申请人 WONIK IPS CO., LTD. 发明人 PARK, HAE YOON
分类号 H01L21/02;H01L21/205;H01L21/3065 主分类号 H01L21/02
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