| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a novel technology for forming a p-type layer in a ZnO-based compound semiconductor element. <P>SOLUTION: A ZnO-based compound semiconductor element has: a substrate; a ZnO-based compound semiconductor layer formed above the substrate and doped with N; and a p-type ZnO-based compound semiconductor layer formed on the ZnO-based compound semiconductor layer doped with N, and co-doped with N and a group-VI element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
