| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the reliability of a nonvolatile semiconductor memory device using a negative sense system. <P>SOLUTION: In executing a read operation, a control circuit starts applying a first voltage having a positive value to a source line at a first time; and at a time after the first time, starts applying, to unselected word lines connected to unselected memory cells other than a memory cell selected from a plurality of memory cells, a second voltage which brings the memory cells into conduction regardless of data held by the memory cells. <P>COPYRIGHT: (C)2013,JPO&INPIT |
