MULTILAYERED WIRING LINE, SEMICONDUCTOR DEVICE WITH MULTILAYERED WIRING LINE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent the film peeling of a microcrystal silicon thin film by suppressing an excessive silicidation reaction between the microcrystal silicon thin film and a metallic thin film.

SOLUTION: The multilayered wiring line is provided as a wiring line of a semiconductor device 20, and comprises a microcrystal silicon thin film 8, and a metallic thin film 9 formed on the thin film. Crystal grains forming the crystal structure of the microcrystal silicon thin film 8 include columnar-shaped crystal grains grown in a thickness direction of the film as a result of a silicidation reaction with the metallic thin film 9 which is caused by a thermal treatment in manufacturing of the semiconductor device. The number of the columnar-shaped crystal grains, which have a length equal to or larger than 60% of the film thickness of the microcrystal silicon thin film 8 in the film thickness direction of the microcrystal silicon thin film 8, is between 6% and 15% of the total number of the crystal grains of the microcrystal silicon thin film 8 inclusive.

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