发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
摘要 |
A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C. |
申请公布号 |
US2013093090(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213707359 |
申请日期 |
2012.12.06 |
申请人 |
HAYASHI YUMI;SAKATA ATSUKO;WATANABE KEI;MATSUNAGA NORIAKI;NAKAO SHINICHI;WADA MAKOTO;TOYODA HIROSHI |
发明人 |
HAYASHI YUMI;SAKATA ATSUKO;WATANABE KEI;MATSUNAGA NORIAKI;NAKAO SHINICHI;WADA MAKOTO;TOYODA HIROSHI |
分类号 |
H01L23/485 |
主分类号 |
H01L23/485 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|