| 摘要 |
The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region. |
