发明名称 COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
申请公布号 US2013092899(A1) 申请公布日期 2013.04.18
申请号 US201213705792 申请日期 2012.12.05
申请人 GLO AB;GLO AB 发明人 SVENSSON PATRIK
分类号 H01L33/06;H01L33/00 主分类号 H01L33/06
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