发明名称 SEMICONDUCTOR PHOTOELECTRODE FOR DYE-SENSITIZED PHOTOELECTROCHEMICAL CELL, METHOD FOR PRODUCING SAID SEMICONDUCTOR PHOTOELECTRODE, AND DYE-SENSITIZED PHOTOELECTROCHEMICAL CELL
摘要 <p>Provided is a semiconductor photoelectrode for a dye-sensitized photoelectrochemical cell, wherein it is possible to sufficiently inhibit current from leaking from a collector electrode. Also provided is a dye-sensitized photoelectrochemical cell which uses the aforementioned semiconductor photoelectrode and from which a transparent conductive film is omitted. A semiconductor photoelectrode used in a dye-sensitized photoelectrochemical cell contains a collector (10) formed from a porous metal sheet having fine pores communicating with the front and the back, and a porous semiconductor layer (14) laminated on the collector (10) and for adsorbing a dye, wherein at least a portion of a section of the collector (10) excluding the section that comes into contact with the porous semiconductor layer (14) is covered with a protective film (12). A dye-sensitized photoelectrochemical cell is provided with the semiconductor photoelectrode between a transparent substrate and a conductive substrate functioning as a cathode electrode, the semiconductor photoelectrode functioning as an anode electrode and being disposed such that the porous semiconductor layer (14) is in the vicinity of or comes into contact with the transparent substrate.</p>
申请公布号 WO2013054487(A1) 申请公布日期 2013.04.18
申请号 WO2012JP06320 申请日期 2012.10.03
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;NIPPON STEEL & SUMIKIN CHEMICAL CO.,LTD. 发明人 SAYAMA, KAZUHIRO;KOHNO, MITSURU
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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