METHOD FOR PRODUCING Beta-GA2O3 SUBSTRATE AND METHOD FOR PRODUCING CRYSTAL LAMINATE STRUCTURE

摘要

Provided are: a method for producing a beta-Ga2O3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a beta-Ga2O3 substrate includes a step for cutting out a beta-Ga2O3 substrate from a beta-Ga2O3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the beta-Ga2O3 crystal before cutting out the beta-Ga2O3 substrate, or on the cut-out beta-Ga2O3 substrate.