| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality nitride semiconductor element that is formed on a silicon substrate and has reduced crack and dislocation. <P>SOLUTION: There is provided a nitride semiconductor element in which a silicon substrate is removed after forming a ground layer, a stacked intermediate layer, and a function layer on the silicon substrate. The nitride semiconductor element includes the ground layer and the stacked intermediate layer. The ground layer includes an AlN buffer layer and a GaN ground layer. The stacked intermediate layer is provided between the ground layer and the function layer. The stacked intermediate layer includes an AlN intermediate layer, an AlGaN intermediate layer, and a GaN intermediate layer. The AlGaN intermediate layer includes a first step layer that is in contact with the AlN intermediate layer. The Al composition ratio of the first step layer gradually decreases in the direction from the AlN intermediate layer toward the first step layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
