| 摘要 |
<P>PROBLEM TO BE SOLVED: To inhibit lowering of a withstanding voltage of a semiconductor device. <P>SOLUTION: A semiconductor device 54 comprises: a semiconductor substrate 50; an insulation film 20 arranged on a surface of the semiconductor substrate; electrodes 16, 18 arranged on a surface of the insulation film; and a voltage application circuit 44 applying voltages to the electrodes 16, 18. The semiconductor substrate 50 includes a cell region 100 and a non-cell region 200 adjacent to the cell region. A semiconductor element is formed in the cell region 100. A withstanding voltage structure is formed in the non-cell region 200. An insulation film is formed on a surface of the non-cell region. The electrodes 16, 18 are electrically isolated from the semiconductor substrate. The voltage application circuit 44 applies voltages to the electrodes 16, 18 during at least a part of a period during which a voltage is not applied to the semiconductor element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
