| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a shift register for large-capacity memory. <P>SOLUTION: A shift register for memory comprises a substrate 101 and a spiral-shaped channel layer 111 which is formed on the substrate 101 and rotates around a shaft L vertical to a principal surface of the substrate 101. The shift register for memory further comprises three or more control electrodes 1121, 1122, and 1123 which are formed on the substrate 101 and used to transfer electric charge in the channel layer 111, and extend in a direction parallel to the shaft L. <P>COPYRIGHT: (C)2013,JPO&INPIT |
