| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having an improved withstanding voltage, and provide a manufacturing method of the same. <P>SOLUTION: The semiconductor device comprises: a first semiconductor layer including a plurality of first diffusion layers; a second semiconductor layer including a plurality of second diffusion layers; and a third semiconductor layer including a plurality of third diffusion layers. Widths of the plurality of first diffusion layers in a first direction are identical with each other. An impurity amount in the plurality of first diffusion layers gradually increases with distance from a bottom edge of the first semiconductor layer toward a top edge. Widths of the plurality of second diffusion layers in the first direction are identical with each other. Impurity amounts in the plurality of second diffusion layers are identical with each other. Each width of the plurality of third diffusion layers in the first direction is narrower than a width of the first diffusion layer in the same layer in the first direction and narrower than a width of the second diffusion layer in the same layer in the first direction, and gradually decreases with distance from a bottom edge of the third semiconductor layer toward a top edge. Impurity amounts in the plurality of third diffusion layers are identical with each other. <P>COPYRIGHT: (C)2013,JPO&INPIT |
