| 摘要 |
1,053,069. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. June 23, 1964 [June 28, 1963], No. 25909/64. Heading H1K. A protected ohmic contact is formed on a semi-conductor body by alloying contact metal to the body at the bottom of a hole produced in successive oxide and glass layers on the body, thehole then being sealed by a layer of a second metal. In a particular embodiment a wafer 10 of P-type silicon contains several N-type regions 12 in one of its surfaces (only one of these regions is shown). A protective layer 14 of silicon dioxide is formed on this surface by heating the wafer in an oxidizing atmosphere containing water vapour. A glass layer 16 is formed on the oxide layer by placing a slurry of the glass on the oxide, drying the slurry to give a powdery glass layer, and by heating to fire the glass. A photo-resist masking layer is then produced and the glass layer 16 etched through this with a mixture of hydrofluoric acid vapour and nitrogen (inert carrier). Etching to reach the semi-conductor is then continued by immersing the wafer in a solution of hydrofluoric acid buffered with ammonium bifluoride. During this stage the glass acts as a mask for the oxide layer. The hole produced through the two layers has a uniform bore. Aluminium or nickel is now deposited over the upper surface of the wafer but is removed from everywhere except the hole by dissolving away the remaining photo-resist which underlies the bulk of the metal layer. The wafer is then heated to alloy the contact metal 22 to the semi-conductor. A layer 24 of chromium, titanium, or molybdenum is deposited through a mask to seal the contact metal within the hole as in Fig. 7 (not shown). It may be desired to mount several devices containing these protected ohmic contacts on to a single substrate having conductive paths on its surface. It is preferred to solder the devices to the conductive path on the substrate. For this purpose a layer 26 of copper or of another solderable metal is deposited on to the sealing metal layer 24. Since at this stage of the manufacturing process the device may be stored for some time, a thin layer 28 of gold or of another rare metal is applied to resist oxidation. Later a protuberance may be provided on top of this contact assembly. It consists of solder 38 and of a gold-plated portion 36 of copper or nickel or other metal of high conductivity. The protuberances on each ohmic contact of the device are then placed in contact with an appropriate tinned path on the substrate and heat and pressure applied to form soldered bonds. The use of protuberances on the contacts ensures that the mounted semiconductor devices are held clear of the substrate to prevent the formation of shortcircuits and also to relieve bonding stresses. |
