| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reducing capacitance between a gate and a source. <P>SOLUTION: A semiconductor device includes: a drain electrode of a MOSFET; a semiconductor substrate; a first semiconductor layer; a plurality of trenches that are formed from an upper surface side of the first semiconductor layer; a second semiconductor layer that is formed on a surface of the first semiconductor layer and is adjacent to the trenches; third semiconductor layers that are formed on a surface of the second semiconductor layer and are adjacent to the trenches; first insulating layers that are formed along the inner walls of the trenches; gate electrode layers that are provided in the first insulating layer, face the second semiconductor layer via the first insulating layers, and function as a gate electrode of the MOSFET; trench-source electrode layers that are formed so as to bury the trenches via the first insulating layers; and a source electrode that is in contact with the third semiconductor layers and is electrically connected to the trench-source electrode layers. The thickness of the first insulating layers between the trench-source electrode layers and the gate electrode layers is thicker than the thickness of the first insulating layers between the second semiconductor layer and the gate electrode layers. <P>COPYRIGHT: (C)2013,JPO&INPIT |
