发明名称 |
Fabrication Method for ZnO Thin Film Transistors Using Etch-stop Layer |
摘要 |
A method is provided for fabricating a thin film transistor. A plurality of layers is deposited on a substrate. The plurality of layers includes a conductive gate contact layer, a gate insulator layer, an undoped channel layer, an etch-stop layer, and a conductive contact layer. The etch-stop layer is positioned between the conductive contact layer and the undoped channel layer. A portion of the conductive contact layer is selectively removed while removal of a portion of the undoped channel layer is prevented by the etch-stop layer during the selective removal. A portion of the etch-stop layer is selectively removed and an exposed portion of the etch-stop layer is converted from a conductor to an insulator by oxidizing the exposed portion of the etch-stop layer in air. A portion of remaining layers of the plurality of layers is selectively removed to form the thin film transistor.
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申请公布号 |
US2013095606(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113271310 |
申请日期 |
2011.10.12 |
申请人 |
BAYRAKTAROGLU BURHAN;LEEDY KEVIN;GOVERNMENT OF THE UNITED STATES, AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE |
发明人 |
BAYRAKTAROGLU BURHAN;LEEDY KEVIN |
分类号 |
H01L21/336;H01L21/302 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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